- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 77A DIRECTFET-S2 | DirectFET™ Isometric SB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET SB | 0 | 4800 | N-Channel | - | 60V | 5.8A (Ta), 21A (Tc) | 36 mOhm @ 13A, 10V | 5V @ 25µA | 11nC @ 10V | 450pF @ 25V | 10V | ±20V | 2.4W (Ta), 30W (Tc) | |||
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2,500
In-stock
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onsemi | MOSFET N-CH 60V 12A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 60V | 12A (Ta) | 94 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 450pF @ 25V | 10V | ±20V | 1.5W (Ta), 48W (Tj) | |||
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12,500
In-stock
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Infineon Technologies | MOSFET P-CH 60V 9.7A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | P-Channel | - | 60V | 9.7A (Tc) | 250 mOhm @ 6.8A, 10V | 2V @ 250µA | 21nC @ 10V | 450pF @ 25V | 4.5V, 10V | ±20V | 42W (Tc) |
