- Series :
- Mounting Type :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 12 mOhm @ 34A, 10V (1)
- 12 mOhm @ 50A, 10V (1)
- 15.8 mOhm @ 25A, 10V (1)
- 2 mOhm @ 100A, 10V (1)
- 2.4 mOhm @ 100A, 10V (1)
- 2.4 mOhm @ 165A, 10V (2)
- 2.5 mOhm @ 170A, 10V (1)
- 23 mOhm @ 29A, 10V (1)
- 3 mOhm @ 75A, 10V (1)
- 3.3 mOhm @ 100A, 10V (1)
- 4.2 mOhm @ 75A, 10V (1)
- 5.1 mOhm @ 65A, 10V (1)
- 8.4 mOhm @ 47A, 10V (1)
- 8.5 mOhm @ 51A, 10V (2)
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 270A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | 380W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 79A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 3200 | N-Channel | - | 60V | 79A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | 110W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 75A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 3200 | N-Channel | - | 60V | 75A (Tc) | 8.5 mOhm @ 51A, 10V | 4V @ 100µA | 86nC @ 10V | 2810pF @ 25V | 10V | ±20V | 140W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 75A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 60V | 75A (Tc) | 8.5 mOhm @ 51A, 10V | 4V @ 100µA | 86nC @ 10V | 2810pF @ 25V | 10V | ±20V | 140W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 57A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 60V | 57A (Tc) | 12 mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | 10V | ±20V | 92W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 48A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 60V | 48A (Tc) | 23 mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | 1360pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 84A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 10V | ±20V | 200W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 2 mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | 6V, 10V | ±20V | 375W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | 10034pF @ 25V | 6V, 10V | ±20V | 294W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 60V | 120A (Tc) | 3 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6540pF @ 50V | 10V | ±20V | 300W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 173A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 60V | 173A (Tc) | 3.3 mOhm @ 100A, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | 6V, 10V | ±20V | 230W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 120A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | 160W (Tc) | ||||
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.5 mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | 10V | ±20V | 375W (Tc) | ||||
|
612
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 120A (Tc) | 4.2 mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | 10V | ±20V | 230W (Tc) | ||||
|
764
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | 380W (Tc) | ||||
|
10,532
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 43A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | 71W (Tc) |