- Series :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 179A DIRECTFET | DirectFET™ Isometric M4 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET™ M4 | 0 | 4800 | N-Channel | - | 60V | 14A (Ta), 68A (Tc) | 7 mOhm @ 41A, 10V | 4.9V @ 150µA | 53nC @ 10V | 2170pF @ 25V | 10V | ±20V | 2.5W (Ta), 63W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 77A DIRECTFET-S2 | DirectFET™ Isometric SB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET SB | 0 | 4800 | N-Channel | - | 60V | 5.8A (Ta), 21A (Tc) | 36 mOhm @ 13A, 10V | 5V @ 25µA | 11nC @ 10V | 450pF @ 25V | 10V | ±20V | 2.4W (Ta), 30W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 86A DIRECTFET | DirectFET™ Isometric MN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MN | 0 | 4800 | N-Channel | - | 60V | 86A (Tc) | 7 mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2120pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 130A | DirectFET™ Isometric ME | StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DirectFET™ Isometric ME | 0 | 4800 | N-Channel | - | 60V | 130A (Tc) | 2.9 mOhm @ 80A, 10V | 3.7V @ 150µA | 200nC @ 10V | 6530pF @ 25V | 6V, 10V | ±20V | 96W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 114A DIRECTFET | DirectFET™ Isometric ME | StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DirectFET™ Isometric ME | 0 | 4800 | N-Channel | - | 60V | 114A (Tc) | 3.6 mOhm @ 70A, 10V | 3.7V @ 150µA | 180nC @ 10V | 6510pF @ 25V | 6V, 10V | ±20V | 115W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MZ | 0 | 4800 | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V | 3.6W (Ta), 89W (Tc) |
