- Series :
- Part Status :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 30A TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO251-3 | 0 | 1500 | N-Channel | - | 30V | 30A (Tc) | 13.5 mOhm @ 30A, 10V | 2.2V @ 250µA | 10nC @ 10V | 1000pF @ 15V | 4.5V, 10V | ±20V | 31W (Tc) | |||
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 30A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | P-TO251-3-1 | 0 | 1500 | N-Channel | - | 30V | 30A (Tc) | 20 mOhm @ 15A, 10V | 2V @ 25µA | 11nC @ 5V | 700pF @ 25V | 4.5V, 10V | ±20V | 60W (Tc) | |||
|
|
VIEW | Infineon Technologies | MOSFET N-CH 25V 30A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | P-TO251-3-1 | 0 | 1500 | N-Channel | - | 25V | 30A (Tc) | 10.4 mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | 1358pF @ 15V | 4.5V, 10V | ±20V | 52W (Tc) | |||
|
|
VIEW | Infineon Technologies | MOSFET N-CH 25V 30A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | P-TO251-3-1 | 0 | 1500 | N-Channel | - | 25V | 30A (Tc) | 10.4 mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | 1358pF @ 15V | 4.5V, 10V | ±20V | 52W (Tc) | |||
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 30A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 600 | N-Channel | - | 40V | 30A (Tc) | 9.2 mOhm @ 30A, 10V | 4V @ 250µA | 71nC @ 10V | 2150pF @ 25V | 10V | ±20V | 140W (Tc) | |||
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 30A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 75 | N-Channel | - | 55V | 30A (Tc) | 24.5 mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | 10V | ±20V | 48W (Tc) | |||
|
|
VIEW | Infineon Technologies | MOSFET N-CH 25V 30A TO-251 | TO-251-3 Short Leads, IPak, TO-251AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | P-TO251-3-1 | 0 | 1500 | N-Channel | - | 25V | 30A (Tc) | 12.8 mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | 1043pF @ 15V | 4.5V, 10V | ±20V | 46W (Tc) | |||
|
|
VIEW | Infineon Technologies | MOSFET N-CH 25V 30A TO-251 | TO-251-3 Short Leads, IPak, TO-251AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | P-TO251-3-1 | 0 | 1500 | N-Channel | - | 25V | 30A (Tc) | 6.5 mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | 4.5V, 10V | ±20V | 83W (Tc) | ||||
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 30A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 3000 | N-Channel | - | 55V | 30A (Tc) | 14 mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | 1870pF @ 25V | 5V, 10V | ±16V | 120W (Tc) | |||
|
|
6,021
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 30A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 55V | 30A (Tc) | 24.5 mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | 10V | ±20V | 48W (Tc) |