- Part Status :
- Applied Filters :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET N/P-CH 60V 3.1A/2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | SIPMOS® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-DSO-8 | 0 | 2500 | N and P-Channel | 2W | Logic Level Gate | 60V | 3.1A, 2A | 110 mOhm @ 3.1A, 10V | 2V @ 20µA | 22.5nC @ 10V | 380pF @ 25V | ||||
|
VIEW | Infineon Technologies | MOSFET N/P-CH 60V 3.1A/2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | SIPMOS® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-DSO-8 | 0 | 2500 | N and P-Channel | 2W | Logic Level Gate | 60V | 3.1A, 2A | 110 mOhm @ 3.1A, 10V | 2V @ 20µA | 22.5nC @ 10V | 380pF @ 25V |