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17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 26A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 2000 | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 26A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 26A DPAK | TO-252-4, DPak (3 Leads + Tab) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | I-PAK (LF701) | 0 | 600 | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | 0 | 1125 | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 26A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 6000 | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 19A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Obsolete | TO-220AB Full-Pak | 0 | 50 | N-Channel | - | 55V | 19A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 39W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 26A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 26A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | 0 | 75 | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 26A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 75 | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 26A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 26A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 2000 | N-Channel | - | 55V | 26A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 55V 4.7/3.4A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N and P-Channel | 2W | Logic Level Gate | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N and P-Channel | 2W | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||||||
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699
In-stock
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Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N and P-Channel | 2W | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | ||||||||
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2,675
In-stock
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Infineon Technologies | MOSFET 2N-CH 55V 4.7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 55V | 4.7A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | ||||||||
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4,000
In-stock
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Infineon Technologies | MOSFET N/P-CH 55V 4.7/3.4A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N and P-Channel | 2W | Logic Level Gate | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||||||
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32,000
In-stock
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Infineon Technologies | MOSFET 2N-CH 55V 4.7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 55V | 4.7A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V |
