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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.030
VIEW
RFQ
Texas instruments NEW LF VERSION OF CSD18502KCS TO-220-3 NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 550 N-Channel - 40V 194A (Ta) 2.6 mOhm @ 100A, 10V 2.4V @ 250µA 64nC @ 10V 5940pF @ 20V 4.5V, 10V ±20V 188W (Ta)
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Per Unit
$3.510
RFQ
3,839
In-stock
Infineon Technologies MOSFET N-CH 75V 195A TO220 TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 75V 195A (Tc) 2.6 mOhm @ 100A, 10V 3.7V @ 250µA 407nC @ 10V 13660pF @ 25V 6V, 10V ±20V 375W (Tc)
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