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- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 50A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO251-3 | 0 | 1500 | N-Channel | - | 30V | 50A (Tc) | 9.3 mOhm @ 50A, 10V | 2V @ 20µA | 13nC @ 5V | 1600pF @ 15V | 4.5V, 10V | ±20V | 58W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 50A IPAK | TO-251-3 Stub Leads, IPak | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO251-3 | 0 | 1500 | N-Channel | - | 30V | 50A (Tc) | 9.3 mOhm @ 50A, 10V | 2V @ 20µA | 13nC @ 5V | 1600pF @ 15V | 4.5V, 10V | ±20V | 58W (Tc) | |||
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In-stock
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Infineon Technologies | MOSFET N-CH 60V 50A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 60V | 50A (Tc) | 9.3 mOhm @ 50A, 10V | 4V @ 34µA | 36nC @ 10V | 2900pF @ 30V | 10V | ±20V | 71W (Tc) |
