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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 60V 28A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO252-3 0 2500 N-Channel - 60V 28A (Tc) 25 mOhm @ 28A, 10V 4V @ 11µA 15nC @ 10V 1200pF @ 30V 10V ±20V 36W (Tc)
IRFP3710
5+
$2.200
50+
$1.500
RFQ
3,942
In-stock
Infineon Technologies MOSFET N-CH 100V 57A TO-247AC TO-247-3 HEXFET® Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 1 N-Channel - 100V 57A (Tc) 25 mOhm @ 28A, 10V 4V @ 250µA 190nC @ 10V 3000pF @ 25V 10V ±20V 200W (Tc)
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