- Package / Case :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 14A PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | - | 30V | 14A (Ta), 40A (Tc) | 7.8 mOhm @ 12A, 10V | 2.35V @ 25µA | 16nC @ 10V | 1050pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta), 27W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 12A DIRECTFET-S1 | DirectFET™ Isometric S1 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | DIRECTFET S1 | 0 | 4800 | N-Channel | - | 25V | 12A (Ta), 39A (Tc) | 7.8 mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1010pF @ 13V | 4.5V, 10V | ±20V | 1.8W (Ta), 21W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 12A DIRECTFET-S1 | DirectFET™ Isometric S1 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | DIRECTFET S1 | 0 | 1000 | N-Channel | - | 25V | 12A (Ta), 39A (Tc) | 7.8 mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1010pF @ 13V | 4.5V, 10V | ±20V | 1.8W (Ta), 21W (Tc) |
