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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 20V 4.4A 6-TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(TSOP-6) 0 1 P-Channel   - 20V 4.4A (Ta) 65 mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15nC @ 4.5V 1079pF @ 10V 2.5V, 4.5V ±12V 2W (Ta)
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Per Unit
$0.137
RFQ
42,000
In-stock
onsemi MOSFET P-CH 20V 2.2A 6-TSOP SOT-23-6 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-TSOP 1263000 3000 P-Channel   - 20V 2.2A (Ta) 65 mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15nC @ 4.5V 565pF @ 5V 2.5V, 4.5V ±12V 500mW (Ta)
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onsemi MOSFET 2P-CH 20V 4.9A 8-SOIC 8-SOIC (0.154", 3.90mm Width) PowerTrench® Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOIC 0 2500 2 P-Channel (Dual) 900mW Logic Level Gate 20V 4.9A 46 mOhm @ 4.9A, 4.5V 1.5V @ 250µA 15nC @ 4.5V 985pF @ 10V      
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