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10 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 13A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel   - 30V 13A (Ta) 11 mOhm @ 7.3A, 10V 3V @ 250µA 79nC @ 10V 1800pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
IRF7413QTRPBF
Per Unit
$0.800
RFQ
12,000
In-stock
Infineon Technologies MOSFET N-CH 30V 13A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 N-Channel   - 30V 13A (Ta) 11 mOhm @ 7.3A, 10V 3V @ 250µA 79nC @ 10V 1800pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 1 N-Channel   - 100V 36A (Tc) 44 mOhm @ 18A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 100V 36A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 600 N-Channel   - 100V 36A (Tc) 44 mOhm @ 18A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel   - 100V 36A (Tc) 44 mOhm @ 18A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 30V 12A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel   - 30V 12A (Ta) 13.5 mOhm @ 6.6A, 10V 1V @ 250µA 79nC @ 10V 1800pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 100V 36A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel   - 100V 36A (Tc) 44 mOhm @ 18A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V 3.8W (Ta), 140W (Tc)
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Infineon Technologies MOSFET N-CH 30V 12A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - Obsolete 8-SO 0 95 N-Channel   - 30V 12A (Ta) 13.5 mOhm @ 6.6A, 10V 1V @ 250µA 79nC @ 10V 1800pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 100V 23A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak 0 50 N-Channel   - 100V 23A (Tc) 44 mOhm @ 12A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V 54W (Tc)
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Diodes Incorporated MOSFET N/P-CH 30V 8-SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOP 0 500 N and P-Channel 1.8W Logic Level Gate 30V 5.8A, 4.8A 25 mOhm @ 5.8A, 10V 1V @ 250µA (Min) 36nC @ 10V 1800pF @ 25V      
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