- Package / Case :
- Series :
- Packaging :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Power Dissipation (Max) :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4085 | N-Channel | - | 30V | 11A (Ta) | 12.5 mOhm @ 11A, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 30V | 11A (Ta) | 12.5 mOhm @ 11A, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 30V | 11A (Ta) | 12.5 mOhm @ 11A, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | - | 30V | 11A (Ta) | 12.5 mOhm @ 11A, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 53A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 30V | 13A (Ta), 53A (Tc) | 8 mOhm @ 30A, 10V | 2V @ 250µA | 27nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta), 35W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 11A 8DSO | 8-SOIC (0.154", 3.90mm Width) | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-DSO-8 | 0 | 2500 | N-Channel | - | 30V | 11A (Ta) | 8.3 mOhm @ 14A, 10V | 2V @ 250µA | 27nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | 1.56W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 65A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 30V | 13A (Ta), 65A (Tc) | 6 mOhm @ 30A, 10V | 2.2V @ 250µA | 26nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta), 39W (Tc) | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 40A TSDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8 | 0 | 5000 | N-Channel | - | 30V | 11A (Ta), 40A (Tc) | 8 mOhm @ 20A, 10V | 2V @ 250µA | 27nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | 2.1W (Ta), 35W (Tc) |