- Manufacture :
- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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3,000
In-stock
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Diodes Incorporated | MOSFET P-CH 8V 10A U-WLB1515-9 | 9-UFBGA, WLBGA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | U-WLB1515-9 | 30000 | 3000 | P-Channel | - | 8V | 10A (Ta) | 10 mOhm @ 2A, 4.5V | 1.1V @ 250µA | 10.5nC @ 4.5V | 1060pF @ 4V | 2.5V, 4.5V | -6V | 890mW (Ta) | |||
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8,000
In-stock
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onsemi | MOSFET P-CH 20V 10A SOT223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 4000 | P-Channel | - | 20V | 10A (Ta) | 50 mOhm @ 6A, 4.5V | 1V @ 250µA | 20nC @ 4.5V | 1200pF @ 16V | 2.5V, 4.5V | ±8V | 8.3W (Ta) | |||
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6,000
In-stock
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Texas instruments | MOSFET P-CH 8V 10A 9DSBGA | 9-UFBGA, DSBGA | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 9-DSBGA | 0 | 3000 | P-Channel | - | 8V | 10A (Ta) | 12.2 mOhm @ 2A, 4.5V | 1.1V @ 250µA | 8.4nC @ 4.5V | 1390pF @ 4V | 2.5V, 4.5V | -6V | 1.5W (Ta) |
