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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$8.020
VIEW
RFQ
STMicroelectronics MOSFET N-CH 1200V 8A TO-247 TO-247-3 MDmesh™ K5 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 1200V 6A (Tc) 2 Ohm @ 2.5A, 10V 5V @ 100µA 13.7nC @ 10V 505pF @ 100V 10V - 130W (Tc)
STW10N95K5
Per Unit
$5.630
RFQ
2,400
In-stock
STMicroelectronics MOSFET N-CH 950V 8A TO-247 TO-247-3 SuperMESH5™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 950V 8A (Tc) 800 mOhm @ 4A, 10V 5V @ 100µA 22nC @ 10V 630pF @ 100V 10V ±30V 130W (Tc)
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