- Manufacture :
- Package / Case :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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1,219
In-stock
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Infineon Technologies | MOSFET P-CH 100V 23A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | P-Channel | 100V | 23A (Tc) | 117 mOhm @ 13A, 10V | 4V @ 250µA | 97nC @ 10V | 1300pF @ 25V | 10V | ±20V | 140W (Tc) | |||
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7,229
In-stock
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Diodes Incorporated | MOSFET P-CH 100V 0.23A TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 24000 | 1 | P-Channel | 100V | 230mA (Ta) | 8 Ohm @ 375mA, 10V | 3.5V @ 1mA | - | 100pF @ 25V | 10V | ±20V | 700mW (Ta) | |||
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4,722
In-stock
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Diodes Incorporated | MOSFET P-CH 100V 0.14A TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 4000 | 1 | P-Channel | 100V | 140mA (Ta) | 20 Ohm @ 150mA, 10V | 3.5V @ 1mA | - | 50pF @ 25V | 10V | ±20V | 625mW (Ta) | |||
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5,842
In-stock
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Diodes Incorporated | MOSFET P-CH 60V 160MA TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | P-Channel | 60V | 160mA (Ta) | 14 Ohm @ 200mA, 10V | 3.5V @ 1mA | - | 50pF @ 18V | 10V | ±20V | 625mW (Ta) | |||
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20,794
In-stock
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Diodes Incorporated | MOSFET P-CH 45V 230MA TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | P-Channel | 45V | 230mA (Ta) | 14 Ohm @ 200mA, 10V | 3.5V @ 1mA | - | 60pF @ 10V | 10V | ±20V | 700mW (Ta) |
