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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 100A 5X6 PQFN 8-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel   - 60V 21A (Ta), 100A (Tc) 5.6 mOhm @ 50A, 10V 4V @ 250µA 75nC @ 10V 3090pF @ 25V 10V ±20V 3.6W (Ta), 114W (Tc)
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Infineon Technologies MOSFET N-CH 150V 5.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 N-Channel   - 150V 5.2A (Ta) 44 mOhm @ 3.1A, 10V 4V @ 250µA 54nC @ 10V 1750pF @ 25V 10V ±20V 3W (Ta)
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Infineon Technologies MOSFET N-CH 100V 1.6A SOT223 TO-261-4, TO-261AA HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 0 1 N-Channel   - 100V 1.6A (Ta) 200 mOhm @ 1.6A, 10V 4V @ 250µA 25nC @ 10V 330pF @ 25V 10V ±20V 1W (Ta)
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Infineon Technologies MOSFET 2N-CH 80V 3.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 2 N-Channel (Dual) 2W Logic Level Gate 80V 3.6A 73 mOhm @ 2.2A, 10V 4V @ 250µA 23nC @ 10V 660pF @ 25V      
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