- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 20V 28A PQFN 5X6 MM | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | 3.6W (Ta), 52W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | 2.7W (Ta), 37W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 26A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | - | 20V | 26A (Ta), 40A (Tc) | 2.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | 3620pF @ 10V | 2.5V, 10V | ±12V | 2.7W (Ta), 37W (Tc) |
