- Package / Case :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 15A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) Single Die | 0 | 1 | N-Channel | - | 30V | 15A (Ta), 44A (Tc) | 8.1 mOhm @ 15A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1125pF @ 15V | 4.5V, 10V | ±20V | 3.6W (Ta), 26W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 15A PQFN56 | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 30V | 15A (Ta), 35A (Tc) | 8.7 mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1160pF @ 15V | 4.5V, 10V | ±20V | 3.1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 13A/28A PQFN | 18-PowerVQFN | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) | 0 | 1 | 2 N-Channel (Dual) | 2.4W, 3.4W | Logic Level Gate | 30V | 13A, 28A | 8.6 mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1060pF @ 15V |