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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 24A PQFN56 8-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) Single Die 0 1 N-Channel - 30V 24A (Ta), 104A (Tc) 3.3 mOhm @ 25A, 10V 2.35V @ 100µA 51nC @ 4.5V 4270pF @ 15V 4.5V, 10V ±20V 3.4W (Ta)
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Infineon Technologies MOSFET N-CH 30V 20A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 155°C (TJ) Obsolete 8-SO 0 1 N-Channel - 30V 20A (Ta) 4 mOhm @ 20A, 10V 2.32V @ 250µA 51nC @ 4.5V 4310pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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