- Package / Case :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 3.2A 6-TSOP | SOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(TSOP-6) | 0 | 1 | N-Channel | - | 30V | 3.2A (Ta) | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 9.6nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | 1.7W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 2.4A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 1 | 2 N-Channel (Dual) | 1.25W | Logic Level Gate | 30V | 2.4A | 135 mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V |
