Build a global manufacturer and supplier trusted trading platform.
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 13A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 N-Channel   - 30V 13A (Ta) 11 mOhm @ 7A, 4.5V 3V @ 250µA 31nC @ 5V - 4.5V ±12V 2.5W (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 60V 7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 N-Channel   - 60V 7A (Ta) 26 mOhm @ 4.2A, 10V 3V @ 250µA 31nC @ 4.5V 1740pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
IRF7413QTRPBF
Per Unit
$0.800
RFQ
12,000
In-stock
Infineon Technologies MOSFET N-CH 30V 13A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 N-Channel   - 30V 13A (Ta) 11 mOhm @ 7.3A, 10V 3V @ 250µA 79nC @ 10V 1800pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N/P-CH 25V 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 N and P-Channel 2W Standard 25V 3.5A, 2.3A 100 mOhm @ 1A, 10V 3V @ 250µA 27nC @ 10V 330pF @ 15V      
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET 2N-CH 50V 3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT)   Surface Mount -55°C ~ 175°C (TJ) 8-SO 0 1 2 N-Channel (Dual) 2.4W Standard 50V 3A 130 mOhm @ 3A, 10V 3V @ 250µA 15nC @ 10V 255pF @ 25V      
Page 1 / 1