- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 11A 8PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (3.3x3.3), Power33 | 0 | 1 | 2 N-Channel (Dual) | 2.7W | Logic Level Gate | 30V | 11A | 14.9 mOhm @ 10A, 10V | 2.35V @ 25µA | 15nC @ 10V | 1165pF @ 10V | |||
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VIEW | Infineon Technologies | MOSFET 2N-CH 100V 2.3A 8PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (3.3x3.3), Power33 | 0 | 1 | 2 N-Channel (Dual) | 2.3W | Standard | 100V | 2.3A | 195 mOhm @ 2.9A, 10V | 4V @ 10µA | 6.3nC @ 10V | 251pF @ 25V |
