- Package / Case :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 21A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | 2.7W (Ta), 37W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 20V 26A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | - | 20V | 26A (Ta), 40A (Tc) | 2.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | 3620pF @ 10V | 2.5V, 10V | ±12V | 2.7W (Ta), 37W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 14A PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | - | 30V | 14A (Ta), 40A (Tc) | 7.8 mOhm @ 12A, 10V | 2.35V @ 25µA | 16nC @ 10V | 1050pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta), 27W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 21A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | - | 30V | 21A (Ta), 40A (Tc) | 3.8 mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | 2155pF @ 25V | 4.5V, 10V | ±20V | 2.7W (Ta), 37W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 20A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | - | 30V | 20A (Ta), 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | 1797pF @ 25V | 4.5V, 10V | ±20V | 2.8W (Ta), 37W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 30V 11A 3X3 PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | P-Channel | - | 30V | 11A (Ta), 24A (Tc) | 10 mOhm @ 11A, 20V | 2.4V @ 25µA | 48nC @ 10V | 1543pF @ 25V | 10V, 20V | ±25V | 2.8W (Ta) |
