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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,726
In-stock
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STMicroelectronics | MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II | 25 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 5.6 A | 790 mOhms | 3 V | 14 nC | ||||||
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473
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 5.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.6 A | 800 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | |||
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156
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Infineon Technologies | MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS P6 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 5.6 A | 600 Ohms | CoolMOS |
