- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,557
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 26 mOhms | 1.3 V | 4.8 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 12 mOhms | - 1 V | 24 nC | Enhancement |
