- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,831
In-stock
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Fairchild Semiconductor | MOSFET SO-8 P-CH -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 14 mOhms | Enhancement | PowerTrench | ||||
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1,910
In-stock
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Diodes Incorporated | MOSFET P-Channel 2.5W | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 14 mOhms | Enhancement | |||||
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2,496
In-stock
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Diodes Incorporated | MOSFET SINGLE P-CHANNEL | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 14 mOhms | Enhancement | |||||
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VIEW | onsemi | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 44 A | 14 mOhms | - 2.6 V | 34 nC | Enhancement | ||||
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2,950
In-stock
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Toshiba | MOSFET N-Ch -30V FET 2400pF -11A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 14 mOhms |
