- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
929
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -80A TO220-3 OptiMOS-P2 | + 5 V, - 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 6.9 mOhms | - 2 V | 63 nC | Enhancement | OptiMOS | |||
|
GET PRICE |
1,876
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 6.9 mOhms | 63 nC | OptiMOS | |||||
|
VIEW | Toshiba | MOSFET N-Ch -30V FET 4800pF -16A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 6.9 mOhms |