1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | |
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Toshiba | MOSFET N-Ch -30V FET 2.2W -4.5A 510pF | VS6-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.5 A | 77 mOhms |
