- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,377
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement | OptiMOS | |||
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1,987
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement | ||||
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2,194
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 70 A | 5 mOhms | - 2 V | 91 nC | Enhancement | ||||
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16,416
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
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GET PRICE |
15,130
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | OptiMOS | ||
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1,507
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.3 mOhms | - 2 V | 160 nC | Enhancement | ||||
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2,959
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
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3,028
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
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9,355
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement | ||||
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3,028
In-stock
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Vishay Semiconductors | MOSFET 30V 3A 3W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 0.125 Ohms | - 2 V | 6.5 nC | Enhancement | TrenchFET | |||
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4,552
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 25 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 4.5 A | 50 mOhms | - 2 V | 10.5 nC | Enhancement | |||||
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2,590
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.5 A | 31 mOhms | - 2 V | - 29 nC | Enhancement | ||||
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305
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.3 A | 25 mOhms | - 2 V | 20.9 nC | Enhancement | ||||
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4,045
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement | ||||
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1,042
In-stock
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Diodes Incorporated | MOSFET P-Channel 2.5W | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 11 mOhms | - 2 V | 60.4 nC | Enhancement | ||||
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2,873
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.5 A | 31 mOhms | - 2 V | - 29 nC | Enhancement | ||||
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8,611
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 107 mOhms | - 2 V | - 2.9 nC | Enhancement | ||||
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8,783
In-stock
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Infineon Technologies | MOSFET P-Ch 30V -1.5A SOT-363-3 | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 230 mOhms | - 2 V | - 0.7 nC | Enhancement | ||||
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4,890
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement | ||||
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2,187
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 107 mOhms | - 2 V | - 2.9 nC | Enhancement | ||||
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GET PRICE |
27,700
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | |||
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1,850
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 107 mOhms | - 2 V | - 2.9 nC | Enhancement | ||||
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11,481
In-stock
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Toshiba | MOSFET P-Ch U-MOSVI FET ID -4A -30VDSS 280pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 136 mOhms | - 2 V | 5.9 nC | |||||
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GET PRICE |
26,250
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.3 mOhms | - 2 V | 160 nC | Enhancement | OptiMOS | ||
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2,500
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 20 A | 33 mOhms | - 2 V | 12.8 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement |
