- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,551
In-stock
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Fairchild Semiconductor | MOSFET PT8PZ 30/25V VIS with 2.05x2.05 PQFN pkg | 25 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11 mOhms | - 2.6 V | 33 nC | Enhancement | PowerTrench | |||
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7,887
In-stock
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onsemi | MOSFET PCH 1.5A 30V SOT-363 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 1.5 A | 325 mOhms | - 2.6 V | 2.2 nC | |||||
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5,996
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5 A | 45 mOhms | - 2.6 V | 10 nC | Enhancement | ||||
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8,545
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 227 mOhms | - 2.6 V | 2.2 nC | Enhancement | |||||
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3,985
In-stock
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Toshiba | MOSFET Small-signal FET 0.491Ohm -1.4A -30V | +/- 20 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.4 A | 191 mOhms | - 2.6 V | Enhancement | ||||||
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4,378
In-stock
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onsemi | MOSFET PCH 4V Power MOSFET | +/- 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 292 mOhms | - 2.6 V | 3.9 nC | Enhancement | ||||
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7,761
In-stock
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onsemi | MOSFET PCH 4V Power MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 617 mOhms | - 2.6 V | 2.2 nC | Enhancement | ||||
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2,055
In-stock
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onsemi | MOSFET PCH 4V Power MOSFET | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 292 mOhms | - 2.6 V | 3.9 nC | Enhancement | ||||
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2,995
In-stock
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onsemi | MOSFET PCH 4V Power MOSFET | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.5 A | 199 mOhms | - 2.6 V | 5 nC | Enhancement |
