- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
4,000
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -30V -15A 7.2mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 15 A | 11.2 mOhms | 34 nC | |||||||
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VIEW | onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 18.5 mOhms | 34 nC | |||||
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VIEW | onsemi | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 44 A | 14 mOhms | - 2.6 V | 34 nC | Enhancement | |||
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GET PRICE |
2,729
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 7.2mOhms 34nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 15 A | 11.2 mOhms | 34 nC |
