- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
2,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.6 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | ||
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GET PRICE |
1,121
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.1 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | ||
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GET PRICE |
3,000
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.6 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | ||
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VIEW | onsemi | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 60 A | 10 mOhms | - 2.6 V | 47 nC | Enhancement |
