- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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9,986
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -3.6A 64mOhm | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.6 A | 103 mOhms | 4.8 nC | ||||||
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4,174
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 3.6A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 3.6 A | 100 mOhms | 16.7 nC | ||||||
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4,509
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH -30V | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.6 A | 75 mOhms | Enhancement | ||||
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1,426
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 100mOhms 16.7nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 3.6 A | 100 mOhms | 16.7 nC | Enhancement | |||
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588
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -3.6A 90mOhm 20nC Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.6 A | 90 mOhms | 20 nC | Enhancement |
