- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,924
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 V-30V TO252 T&R 2.5K | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.5 A | 10.2 mOhms | - 2.1 V | 59.2 nC | Enhancement | |||
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1,718
In-stock
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Diodes Incorporated | MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 36 A | 7.5 mOhms | - 2.1 V | 126.2 nC | Enhancement | |||
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2,380
In-stock
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Diodes Incorporated | MOSFET P-Channel 1.25W | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 65 mOhms | - 2.1 V | 10.1 nC | Enhancement | |||
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1,121
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.1 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | |||
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2,343
In-stock
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Diodes Incorporated | MOSFET PMOS-DUAL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 6.9 A | 45 mOhms | - 2.1 V | 6.8 nC | Enhancement |
