- Manufacture :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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14,056
In-stock
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Nexperia | MOSFET TAPE7 MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 470 mA | 660 mOhms | Enhancement | |||||
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GET PRICE |
9,185
In-stock
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Fairchild Semiconductor | MOSFET 30V 2.9A Dual P Ch PowerTrench | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.9 A | 90 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
6,804
In-stock
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Nexperia | MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 200 mA | 2.8 Ohms | 0.55 nC | |||||
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GET PRICE |
5,298
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 900 mOhms | - 400 mV | 0.7 nC | Enhancement | |||
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350,200
In-stock
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Nexperia | MOSFET 30V 230 MA P-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 230 mA | 2.8 Ohms | - 0.9 V | 0.55 nC | Enhancement | |||
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GET PRICE |
10,000
In-stock
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Nexperia | MOSFET P-Chan -30V -300mA | 8 V | SMD/SMT | DFN1006B-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 4.1 Ohms |
