- Vgs - Gate-Source Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,718
In-stock
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Diodes Incorporated | MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 36 A | 7.5 mOhms | - 2.1 V | 126.2 nC | Enhancement | |||
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GET PRICE |
2,260
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V-30V P-Ch 36A 7.5Vgs 6324 | +/- 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 36 A | 5.7 mOhms | - 2.1 V | 126.2 nC | Enhancement | |||
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GET PRICE |
2,157
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 30Vgss 6807pF 139nC | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13.2 A | 8.5 mOhms | - 1.6 V | 139 nC | Enhancement | PowerDI |
