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10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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841
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 2.3 Ohms | Enhancement | QFET | ||||||
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179
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.9 Ohms | Enhancement | QFET | ||||||
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GET PRICE |
30,700
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 1.4 Ohms | Enhancement | QFET | |||||
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430
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8.6 A | 1.3 Ohms | Enhancement | QFET | ||||||
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1
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11.4 A | 960 mOhms | Enhancement | QFET | ||||||
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GET PRICE |
81,000
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 9 A | 1.4 Ohms | Enhancement | QFET | |||||
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133
In-stock
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Toshiba | MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 7 A | 1.6 Ohms | 4 V | 32 nC | Enhancement | ||||||
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388
In-stock
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Toshiba | MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 9 A | 1 Ohms | 4 V | 46 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch 700V PWR FET ID 5A PD 150W 1150pF | TO-3PN-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 5 A | 2.5 Ohms | ||||||||||||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8.5 A | 1.25 Ohms | Enhancement |