1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | |
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430
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Toshiba | MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm | SMD/SMT | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 6 A | 1.11 Ohms |
