- Mounting Style :
- Package / Case :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
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96
In-stock
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IXYS | MOSFET 1.4 Amps 1000V 11 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.4 A | 11 Ohms | Enhancement | |||
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VIEW | IXYS | MOSFET 1.4 Amps 1000V 11 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.4 A | 11 Ohms | Enhancement | |||
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VIEW | IXYS | MOSFET 1.4 Amps 1000V 11 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.4 A | 11 Ohms | Enhancement | |||
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VIEW | IXYS | MOSFET 1.5 Amps 1000V 11 Ohms Rds | Tube | Si | 1000 V | 1.5 A | 11 Ohms | |||||||||||
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VIEW | IXYS | MOSFET 1.5 Amps 1000V 11 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.5 A | 11 Ohms | Enhancement | |||
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VIEW | IXYS | MOSFET 0.1 Amps 1000V 80 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.5 A | 11 Ohms | Enhancement | |||
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VIEW | IXYS | MOSFET 1 Amps 1000V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.5 A | 11 Ohms | Enhancement |
