- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
-
- 102 A (1)
- 115 A (1)
- 12 A (1)
- 120 A (4)
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- 18 A (10)
- 188 A (1)
- 20 A (1)
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- 230 A (3)
- 24 A (7)
- 25 A (2)
- 30 A (3)
- 31 A (2)
- 32 A (2)
- 34 A (6)
- 44 A (5)
- 48 A (3)
- 5 A (5)
- 50 A (5)
- 60 A (2)
- 62 A (3)
- 64 A (2)
- 65 A (2)
- 7 A (2)
- 72 A (2)
- 74 A (3)
- 75 A (1)
- 76 A (1)
- 84 A (4)
- 86 A (3)
- 88 A (9)
- 9.3 A (2)
- 9.4 A (3)
- 9.5 A (2)
- 90 A (1)
- 94 A (1)
- 96 A (5)
- 98 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.018 Ohms (2)
- 0.028 Ohms (1)
- 10.3 mOhms (2)
- 10.5 mOhms (2)
- 10.6 mOhms (2)
- 100 mOhms (5)
- 11 mOhms (1)
- 125 mOhms (3)
- 14 mOhms (2)
- 150 mOhms (4)
- 16 mOhms (1)
- 165 mOhms (2)
- 17 mOhms (1)
- 170 mOhms (1)
- 18 mOhms (3)
- 20 mOhms (1)
- 22 mOhms (7)
- 23 mOhms (4)
- 235 mOhms (3)
- 24 mOhms (6)
- 25 mOhms (1)
- 26 mOhms (3)
- 27 mOhms (2)
- 28 mOhms (4)
- 29 mOhms (3)
- 300 mOhms (6)
- 32 mOhms (1)
- 34 mOhms (3)
- 380 mOhms (3)
- 40 mOhms (2)
- 50 mOhms (3)
- 54 mOhms (4)
- 55 mOhms (1)
- 60 mOhms (3)
- 600 mOhms (5)
- 66 mOhms (1)
- 7.5 mOhms (3)
- 72.5 mOhms (2)
- 75 mOhms (2)
- 77.5 mOhms (3)
- 78 mOhms (3)
- 82 mOhms (2)
- 85 mOhms (1)
- 9.6 mOhms (5)
- 9.7 mOhms (1)
- 9.9 mOhms (4)
- Qg - Gate Charge :
-
- 100 nC (3)
- 107 nC (2)
- 135 nC (1)
- 145 nC (4)
- 15 nC (5)
- 15.3 nC (1)
- 150 nC (2)
- 152 nC (4)
- 156 nC (2)
- 160 nC (1)
- 161 nC (1)
- 18 nC (4)
- 180 nC (1)
- 185 nC (2)
- 23.3 nC (4)
- 240 nC (2)
- 25 nC (9)
- 265 nC (1)
- 27 nC (2)
- 28 nC (2)
- 29 nC (7)
- 31.5 nC (2)
- 378 nC (1)
- 38 nC (1)
- 44.7 nC (4)
- 48 nC (2)
- 57 nC (3)
- 60 nC (5)
- 65 nC (2)
- 70 nC (9)
- 82 nC (2)
- 87 nC (11)
- 90 nC (2)
- 91 nC (1)
124 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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3,632
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
3,135
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
1,907
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
23,630
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 49A 40mOhm 156nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | 156 nC | Enhancement | |||||
|
|
GET PRICE |
182,100
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 24 mOhms | 70 nC | Enhancement | ||||
|
|
GET PRICE |
177,900
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 76A 20mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 76 A | 20 mOhms | 100 nC | Enhancement | ||||
|
|
14,020
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 9.7 mOhms | 161 nC | Enhancement | |||||
|
|
2,023
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
5,121
In-stock
|
STMicroelectronics | MOSFET Low charge STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 125 mOhms | Enhancement | ||||||
|
|
11,660
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.3 mOhms | 2 V | 87 nC | Enhancement | ||||
|
|
785
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | ||||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | ||||
|
|
657
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||
|
|
137
In-stock
|
IXYS | MOSFET 230A 200V | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 230 A | 7.5 mOhms | |||||||
|
|
8,790
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
1,732
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | OptiMOS | |||
|
|
5,816
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 5A 600mOhm 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
|
|
5,332
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
|
|
947
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | ||||
|
|
502
In-stock
|
IXYS | MOSFET 230A 200V | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 230 A | 7.5 mOhms | Enhancement | ||||||
|
|
756
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | ||||
|
|
446
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
229
In-stock
|
IXYS | MOSFET 188 Amps 200V 0.0105 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 188 A | 10.5 mOhms | HyperFET | ||||||
|
|
1,498
In-stock
|
Infineon Technologies | MOSFET 200V SINGLE N-CH 55mOhms 91nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 55 mOhms | 5.5 V | 91 nC | Enhancement | ||||
|
|
413
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
469
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
20,122
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 150 mOhms | 44.7 nC | Enhancement | |||||
|
|
GET PRICE |
18,060
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 100 mOhms | 18 nC | Enhancement | ||||
|
|
8,340
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | 82 nC | Enhancement | |||||
|
|
614
In-stock
|
Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement |
