- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
479
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | |||
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GET PRICE |
150
In-stock
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IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 30 A | 350 mOhms | 6.5 V | 310 nC | Enhancement | Polar, HiPerFET | ||
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GET PRICE |
816
In-stock
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IXYS | MOSFET 12 Amps 1200V 1.15 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 12 A | 1.35 Ohms | 6.5 V | 103 nC | Enhancement | Polar, HiPerFET | ||
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GET PRICE |
42
In-stock
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IXYS | MOSFET 32 Amps 1200V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 32 A | 310 mOhms | 6.5 V | 360 nC | Enhancement | Polar, HiPerFET | ||
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GET PRICE |
90
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | 6.5 V | 120 nC | Enhancement | Polar, HiPerFET | ||
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GET PRICE |
600
In-stock
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IXYS | MOSFET 32 Amps 1200V 0.46 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 26 A | 500 mOhms | 6.5 V | 255 nC | Enhancement | Polar, HiPerFET | ||
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GET PRICE |
75
In-stock
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IXYS | MOSFET 26 Amps 1200V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 26 A | 500 mOhms | 6.5 V | 255 nC | Enhancement | Polar, HiPerFET | ||
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GET PRICE |
92
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | |||
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GET PRICE |
32
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | ||
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GET PRICE |
28
In-stock
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IXYS | MOSFET 32 Amps 1200V 0.46 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 15 A | 500 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | ||
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VIEW | IXYS | MOSFET 20 Amps 1200V 1 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 20 A | 570 mOhms | 6.5 V | 193 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | IXYS | MOSFET 20 Amps 1200V 0.6 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 20 A | 570 mOhms | 6.5 V | 193 nC | Enhancement | Polar, HiPerFET |
