- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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21,578
In-stock
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Toshiba | MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 47.4 mOhms | - 1 V | 12.8 nC | |||
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GET PRICE |
2,389
In-stock
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Toshiba | MOSFET Small-signal MOSFET P-Channel | +/- 8 V | SMD/SMT | UFM-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 24.9 mOhms | - 1 V | 12.8 nC | Enhancement |
