- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
3,927
In-stock
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Diodes Incorporated | MOSFET Comp Pair Enh FET 40Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 12.2 A, - 8.8 A | 15 mOhms, 29 mOhms | 1 V, - 1 V | 40 nC, 34 nC | Enhancement | PowerDI | ||
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GET PRICE |
2,538
In-stock
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Vishay Semiconductors | MOSFET N and P Channel 40V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 30 A, - 30 A | 0.0077 Ohms, 0.022 Ohms | 1.3 V, - 2.5 V | 38.3 nC, 45 nC | Enhancement | TrenchFET | ||
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GET PRICE |
2,483
In-stock
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Diodes Incorporated | MOSFET 40V Comp Dual ENH Low On-Resistance | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 7.2 A, 5.2 A | 18 mOhms, 39 mOhms | 1 V, - 3 V | 12.9 nC, 14 nC | Enhancement | |||
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450
In-stock
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Toshiba | MOSFET N and P Ch 40V FET 6.1A 1.5W 850pF | SMD/SMT | SOP-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 6.1 A, 5.3 A | 36 mOhms, 53 mOhms | |||||||||
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4,995
In-stock
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Diodes Incorporated | MOSFET MOSFET COMP NPN | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 7.5 A, 7.5 A | 13 mOhms, 18 mOhms | 800 mV, - 1.8 V | 37.6 nC, 33.7 nC | Enhancement | |||
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2,468
In-stock
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Diodes Incorporated | MOSFET Comp ENH FET 40VDs 20Vgs 1.3W | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 7 A | 20 mOhms, 40 mOhms | 3 V | 19.1 nC, 21.5 nC | Enhancement |
