- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,935
In-stock
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Toshiba | MOSFET Small-Signal MOSFET 2-in-1 | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 170 mA, 170 mA | 8.1 Ohms, 8.1 Ohms | 1.1 V, 1.1 V | 270 pC, 270 pC | Enhancement | |||
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5,389
In-stock
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Toshiba | MOSFET Small-signal MOSFET 2in1 ESD Protected | 20 V, 20 V | SMD/SMT | SOT-363-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 300 mA, 300 mA | 1.05 Ohms, 1.05 Ohms | 1.1 V, 1.1 V | 390 pC, 390 pC | Enhancement |
