- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Tradename | |
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3,803
In-stock
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Diodes Incorporated | MOSFET Dual 60V N-Ch FET 500mOhm 1.3A 120mJ | - | SMD/SMT | SO-8 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 1.2 A, 1 A | 600 mOhms, 600 mOhms | - | Enhancement | IntelliFET | |||
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950
In-stock
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Diodes Incorporated | MOSFET 60V Dual N-Ch Mosfet 100mOhm 2.8A 210mJ | 5 V, 5 V | SMD/SMT | SM-8 | - 40 C | + 125 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 2.8 A, 2.8 A | 75 mOhms, 75 mOhms | 700 mV, 700 mV | Enhancement | IntelliFET | |||
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885
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Intellifet 200mohm 1.8A 210mJ | 5 V, 5 V | SMD/SMT | SM-8 | - 40 C | + 125 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 1.8 A, 1.8 A | 150 mOhms, 150 mOhms | 700 mV | Enhancement | IntelliFET |
