- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,834
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 3 A | 2.9 Ohms | 3 V | 12.5 nC | Enhancement | |||||
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941
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 1.4 Ohms | 3 V | 17 nC | Enhancement | |||||
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2,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 3 A | 3.5 Ohms | 4 V | 12.5 nC | Enhancement | |||||
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977
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1.3 Ohms | 4 V | 21.5 nC | Enhancement | |||||
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590
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1.3 Ohms | 3 V | 21.5 nC | Enhancement | |||||
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1,664
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1 Ohms | 3 V | 21.5 nC | Enhancement | |||||
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924
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 6 Ohms | 3 V | 10 nC | Enhancement | |||||
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1,216
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 8 Ohms | 4 V | 10 nC | Enhancement | |||||
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582
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 2 Ohms | 3 V | 17 nC | Enhancement | |||||
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310
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 2 Ohms | 4 V | 17 nC | Enhancement | |||||
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600
In-stock
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STMicroelectronics | MOSFET N-Ch 1050V 8 Ohm 1.4 A SuperMESH3(TM) | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.4 A | 8 Ohms | 3 V | 13 nC | Enhancement | SuperMesh |