- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
2,975
In-stock
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Siliconix / Vishay | MOSFET Dual P-Channel 30V TSOP-6 | +/- 20 V, +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 2.5 A, - 2.5 A | 0.14 Ohms, 0.14 Ohms | - 1.5 V, - 1.5 V | 11.1 nC, 11.1 nC | Enhancement | |||
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GET PRICE |
2,688
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.9A | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 3.9 A, - 3.9 A | 70 mOhms, 70 mOhms | - 3 V | 11 nC | Enhancement | |||
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GET PRICE |
1,160
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V, - 30 V | - 2 A, - 2 A | 130 mOhms, 130 mOhms | - 2 V | - 1.2 nC, - 1.2 nC | Enhancement | |||
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GET PRICE |
1,280
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | - 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V, - 30 V | - 2 A, - 2.3 A | 130 mOhms, 93 mOhms | - 2 V, - 1.2 V | - 1.2 nC, 0.65 nC | Enhancement | |||
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GET PRICE |
2,999
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V, - 30 V | - 1.5 A, - 1.5 A | 230 mOhms, 230 mOhms | - 2 V | - 0.7 nC, - 0.7 nC | Enhancement | |||
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GET PRICE |
2,500
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 6 A, - 6 A | 20 mOhms, 20 mOhms | - 3 V, - 3 V | 22 nC, 22 nC | Enhancement | |||
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GET PRICE |
3,000
In-stock
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Vishay Semiconductors | MOSFET Dual P-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 30 A, - 30 A | 0.014 Ohms, 0.014 Ohms | - 2.5 V, - 2.5 V | 50 nC, 50 nC | Enhancement | TrenchFET | ||
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VIEW | Siliconix / Vishay | MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 5 A, - 5 A | 0.056 Ohms, 0.056 Ohms | - 2.5 V, - 2.5 V | 15 nC, 15 nC | Enhancement | TrenchFET | |||
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VIEW | Siliconix / Vishay | MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 7.5 A, - 7.5 A | 0.028 Ohms, 0.028 Ohms | - 2.5 V, - 2.5 V | 30 nC, 30 nC | Enhancement | TrenchFET |
