- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
11,665
In-stock
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Infineon Technologies | MOSFET P-Ch DPAK-2 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 390 mA, - 390 mA | 700 mOhms, 700 mOhms | - 1.2 V, - 1.2 V | - 620 pC, - 620 pC | Enhancement | |||
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GET PRICE |
4,915
In-stock
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Infineon Technologies | MOSFET P-Ch | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 390 mA, - 390 mA | 700 mOhms, 700 mOhms | - 1.2 V, - 1.2 V | - 620 pC, - 620 pC | Enhancement | |||
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GET PRICE |
2,358
In-stock
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Diodes Incorporated | MOSFET MOSFET P-CHAN | +/- 8 V, +/- 8 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 6.04 A, - 6.04 A | 23 mOhms, 23 mOhms | - 1 V, - 1 V | 15.4 nC, 15.4 nC | Enhancement | |||
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GET PRICE |
5,475
In-stock
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onsemi | MOSFET PFET SC88 20V 88MA 2 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 1 A, - 1 A | 215 mOhms, 215 mOhms | - 1.2 V, - 1.2 V | 2.2 nC, 2.2 nC | Enhancement | |||
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GET PRICE |
2,602
In-stock
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Diodes Incorporated | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W | +/- 10 V, +/- 10 V | SMD/SMT | U-DFN2030-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 25 mOhms, 25 mOhms | - 1.4 V, - 1.4 V | 21.4 nC, 21.4 nC | Enhancement | |||
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GET PRICE |
1,664
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K | - 6 V, - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 3 A, - 3 A | 80 mOhms, 80 mOhms | - 900 mV, - 900 mV | 3.3 nC, 3.3 nC | Enhancement | |||
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GET PRICE |
1,542
In-stock
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Diodes Incorporated | MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 900 mA, - 900 mA | 180 mOhms, 180 mOhms | - 1.2 V, - 1.2 V | 2.1 nC, 2.1 nC | Enhancement | |||
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GET PRICE |
431
In-stock
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Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 12V VGSS | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 55 mOhms, 55 mOhms | - 1.1 V, - 1.1 V | 6.5 nC, 6.5 nC | Enhancement | |||
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GET PRICE |
5,548
In-stock
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Texas instruments | MOSFET 20V P-channel NexFET Pwr MOSFET | - 6 V, - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 1.6 A, - 1.6 A | 56 mOhms, 56 mOhms | - 1.1 V, - 1.1 V | 2.5 nC, 2.5 nC | Enhancement | NexFET | ||
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GET PRICE |
540
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 8 V, +/- 8 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 330 mA, - 330 mA | 3.6 Ohms, 3.6 Ohms | - 300 mV, - 300 mV | 1.2 nC, 1.2 nC | Enhancement | ||||
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GET PRICE |
11,908
In-stock
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Diodes Incorporated | MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 900 mA, - 900 mA | 180 mOhms, 180 mOhms | - 1.2 V, - 1.2 V | 2.1 nC, 2.1 nC | Enhancement | |||
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VIEW | Siliconix / Vishay | MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified | +/- 8 V, +/- 8 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 3.9 A, - 3.9 A | 0.13 Ohms, 0.13 Ohms | - 1.5 V, - 1.5 V | 4.6 nC, 4.6 nC | Enhancement | ||||
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GET PRICE |
2,480
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 54 mOhms, 54 mOhms | - 1.2 V, - 1.2 V | - 10 nC, - 10 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 32 mOhms, 32 mOhms | - 1.2 V, - 1.2 V | - 16 nC, - 16 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL N-CH | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 54 mOhms, 54 mOhms | - 1.2 V, - 1.2 V | - 10 nC, - 10 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 5.7 A, - 5.7 A | 32 mOhms, 32 mOhms | - 1.2 V, - 1.2 V | - 16 nC, - 16 nC | Enhancement |
