- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,000
In-stock
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Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23 A | 88 mOhms | 3 V | 34 nC | Enhancement | |||
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555
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 88 mOhms | 3 V | 57 nC | Enhancement | |||
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651
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | 145 nC | Enhancement | ||||
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124
In-stock
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STMicroelectronics | MOSFET N-channel 600V, 35A FDMesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | Enhancement | |||||
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32
In-stock
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Toshiba | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC | 10 V | Through Hole | TO-3PN-3 | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 88 mOhms | 105 nC | ||||||||
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VIEW | STMicroelectronics | MOSFET N-channel 600V Power MDmesh | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | Enhancement |
